Focused Ion Beam System Specification
Voltage
500 V to 30 kV
Beam Current
0.1 pA~65 nA( 15steps aperture strip )
SEM Electron Optics Specification
Resolution
0.6 nm at 15 kV to 2 kV, 0.7 nm at 1 kV
Magnification
x 30 ~ x 1,280,000
Electron gun: Cold FEG
Accelerating Voltage
30, 80, 200 kV
Resolution
TEM Point : 0.23 nm
TEM Lattice : 0.10 nm
STEM Point : 0.078 nm(BF, DF)
Magnification
TEM: x2k ~ x2,000k
STEM: x20k ~ x150,000k
Cs-STEM
(HAADF, LAADF, ABF, BF)
Dual SDD(200mm2)
EDS system
3D Tomography
Oneview CMOS camera
Acceleration voltage
80, 200, 300 kV
HAADF-STEM resolution
300 kV, 0.05 nm
EDS system
Super-X, 4-SDD, 120mm^2